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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6522-70/D The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband performances of this device makes it ideal for large-signal, common source amplifier applications in 26 volt base station equipment. * Specified Performance @ Full GSM Band, 921-960 MHz, 26 Volts Output Power, P1dB -- 80 Watts (Typ) Power Gain @ P1dB -- 16 dB (Typ) Efficiency @ P1dB -- 58% (Typ) * MRF6522-70 Available in Tape and Reel by Adding R3 Suffix to Part Number. MRF6522-70R3 = 250 Units per 32 mm, 13 inch Reel. MRF6522-70 MRF6522-70R3 70 W, 921 - 960 MHz, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 465D-02, STYLE 1 MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value 65 20 7 159 0.9 - 65 to +150 200 Unit Vdc Vdc Adc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 1.1 Unit C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MOTOROLA RF (c) Motorola, Inc. 1999 DEVICE DATA MRF6522-70 MRF6522-70R3 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 Adc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0 ) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 400 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Output Power (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) Common-Source Amplifier Power Gain @ P1dB (Min) (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) Drain Efficiency @ Pout = 50 W (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) Drain Efficiency @ P1dB (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) Input Return Loss @ Pout = 50 W (VDD = 26 Vdc, IDQ = 400 mA, f = 921 MHz and 960 MHz f = 940 MHz) Output Mismatch Stress (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz, VSWR = 5:1, All Phase Angles) P1dB Gps 1 2 IRL 10 15 -- -- -- -- 73 14 47 -- 80 16 51 58 -- 18 -- -- W dB % % dB Ciss Coss Crss -- 41 2.4 130 47 3 -- 52 3.4 pF pF pF VGS(th) VGS(Q) VDS(on) gfs 2 3 -- 2 3 4 0.15 3 4 5 0.6 -- Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 10 1 Vdc Adc Adc Symbol Min Typ Max Unit No Degradation In Output Power Before and After Test (1) Value excludes the input matching. (2) To meet application requirements, Motorola test fixtures have been designed to cover full GSM 900 band ensuring batch-to-batch consistency. MRF6522-70 MRF6522-70R3 2 MOTOROLA RF DEVICE DATA Vreg VBIAS T1 Gnd Vin Vout R1 R2 C1 R6 VSUPPLY R3 T2 R4 C7 R5 C6 RF Input C5 C8 C3 C12 C2 C4 C10 C14 C13 RF Output Q1 C9 C11 C1 C2 C3 C4, C6, C14 C5 C7, C8, C13 C9, C10 C11, C12 R1 R2 1.0 F, Chip Capacitor 0805 10 F, 35 Vdc Tantalum Capacitor 100 nF, Chip Capacitor 22 pF, ACCU-P Chip Capacitor 0805 2.7 pF, ACCU-P Chip Capacitor 0805 4.7 pF, ACCU-P Chip Capacitor 0805 8.2 pF, ACCU-P Chip Capacitor 0805 2.2 pF, ACCU-P Chip Capacitor 0805 10 , Chip Resistor 0805 1.0 k, Chip Resistor 0805 R3 R4 R5 R6 T1 T2 1.2 k, Chip Resistor 0805 2.2 k, Chip Resistor 0805 220 , Chip Resistor 0805 5.0 k SMD Potentiometer LP2951 Micro-8 BC847 SOT-23 SUBSTRATE GI180 0.8 mm Figure 1. MRF6522-70 Test Circuit Schematic MOTOROLA RF DEVICE DATA MRF6522-70 MRF6522-70R3 3 TYPICAL CHARACTERISTICS 17.5 IDQ = 600 mA 17.0 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 500 mA 200 mA 16.0 VDS = 26 Vdc f = 921 MHz 15.5 15.0 400 mA 300 mA 18.0 17.8 17.6 17.4 17.2 17.0 16.8 16.6 16.4 16.2 10 Pout, OUTPUT POWER (WATTS) 100 16.0 10 Pout, OUTPUT POWER (WATTS) 100 VDS = 26 Vdc f = 960 MHz 300 mA 200 mA IDQ = 600 mA 500 mA 400 mA 16.5 Figure 2. Power Gain versus Output Power Figure 3. Power Gain versus Output Power 105 115 Pout , OUTPUT POWER (WATTS) 105 3.0 W 95 85 75 65 55 45 18 19 20 IDQ = 400 mA f = 921 MHz 21 23 25 22 24 26 VDD, SUPPLY VOLTAGE (VOLTS) 27 28 2.0 W 4.0 W Pout , OUTPUT POWER (WATTS) Pin = 5.0 W 95 Pin = 5.0 W 85 3.0 W 75 65 55 45 35 18 19 20 IDQ = 400 mA f = 960 MHz 21 22 23 24 25 26 VDD, SUPPLY VOLTAGE (VOLTS) 27 28 2.0 W 4.0 W Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage 80 70 Pout , OUTPUT POWER (WATTS) 60 50 40 30 Pout 20 10 0 0 0.5 VDS = 26 V IDQ = 400 mA f = 921 MHz 1.0 1.5 Pin, INPUT POWER (WATTS) 2.0 80 70 60 h 50 40 30 20 10 0 Figure 6. Efficiency and Output Power versus Input Power MRF6522-70 MRF6522-70R3 4 MOTOROLA RF DEVICE DATA h , EFFICIENCY (%) TYPICAL CHARACTERISTICS 80 70 Pout , OUTPUT POWER (WATTS) 60 50 40 30 20 10 0 0 0.5 VDS = 26 V IDQ = 400 mA f = 960 MHz 1.0 1.5 Pin, INPUT POWER (WATTS) 2.0 Pout 80 70 60 h 50 40 30 20 10 0 Figure 7. Efficiency and Output Power versus Input Power 20 19 G ps , POWER GAIN (dB) 18 17 16 15 14 13 0.02 0.03 0.06 0.12 0.21 0.38 0.70 1.26 2.26 3.96 Pin, INPUT POWER (WATTS) Gps 70 60 40 30 h VDS = 26 Vdc f = 921 MHz 20 10 0 Figure 8. Power Gain and Efficiency versus Input Power 20 19 G ps , POWER GAIN (dB) 18 17 16 15 14 13 0.02 0.03 0.05 0.10 0.18 0.34 0.62 1.15 2.14 3.70 Pin, INPUT POWER (WATTS) Gps 70 60 40 30 h VDS = 26 Vdc f = 960 MHz 20 10 0 Figure 9. Power Gain and Efficiency versus Input Power MOTOROLA RF DEVICE DATA MRF6522-70 MRF6522-70R3 5 h, EFFICIENCY (%) 50 h, EFFICIENCY (%) 50 h , EFFICIENCY (%) VBIAS Ground VSUPPLY C1 R2 R3 R4 R1 T1 C2 R6 C3 C4 R5 C7 C6 C10 C12 C13 C9 C11 STRAP MRF6522-70 C14 T2 C5 C8 Q1 Figure 10. Component Parts Layout -10 IRL, INPUT RETURN LOSS (dB) 18 Gps G ps , GAIN (dB) -15 17 -20 VDS = 26 Vdc IDQ = 400 mA 16 IRL -25 910 920 930 940 950 f, FREQUENCY (MHz) 15 960 970 Figure 11. Performance in Broadband Circuit (at Small Signal) MRF6522-70 MRF6522-70R3 6 MOTOROLA RF DEVICE DATA Zin f = 925 MHz 960 MHz Zo = 10 ZOL* f = 925 MHz 960 MHz VSUPPLY = 26 Vdc, IBIAS = 400 mA, CW = Room Temperature f MHz 925 940 960 Zin Zin 2.65 + j2.53 2.67 + j2.14 2.85 + j1.87 ZOL* 1.62 - j0.2 1.56 - j0.34 1.55 - j0.2 = Conjugate of fixture gate terminal impedance. ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Note: Output tuning was chosen based on tradeoffs between P1dB, gain and drain efficiency for GSM application (P1dB = 80 W, gain = 16 dB, efficiency = 56%). Figure 12. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF6522-70 MRF6522-70R3 7 PACKAGE DIMENSIONS G 1 Q 2 PL 0.25 (0.010) M TA M B M -B- 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030" AWAY FROM FLANGE. INCHES MIN MAX 1.065 1.075 0.380 0.390 0.160 0.205 0.425 0.435 0.060 0.070 0.004 0.006 0.870 BSC 0.096 0.106 0.185 0.215 0.591 0.601 0.124 0.130 0.392 0.404 MILLIMETERS MIN MAX 27.05 27.31 9.65 9.91 4.06 5.21 10.80 11.05 1.52 1.78 0.10 0.15 22.10 BSC 2.44 2.70 4.70 5.46 15.01 15.27 3.15 3.30 9.96 10.26 K D 2 N 0.38 (0.015) M R TA M B M 0.38 (0.015) C M TA M B M DIM A B C D E F G H K N Q R H E -A- -T- SEATING PLANE F STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465D-02 ISSUE A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA / PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 2, Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. - http://sps.motorola.com/mfax/ 852-26668334 HOME PAGE: http://motorola.com/sps/ JAPAN: Motorola Japan Ltd.; SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488 MRF6522-70 MRF6522-70R3 8 MRF6522-70/D MOTOROLA RF DEVICE DATA |
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